This N-channel enhancement mode MOSFET is rated for 60 V drain-source voltage and up to 14.8 A continuous drain current at 25°C. It provides low on-resistance of 6.6 mΩ maximum at 10 V gate drive and 8.4 mΩ maximum at 4.5 V gate drive for efficient power switching. The device is offered in an SO-8 package and is intended for synchronous rectifier, power management, and DC-DC converter applications. It operates over a junction and storage temperature range of -55°C to +150°C and is specified as totally lead-free, fully RoHS compliant, and halogen- and antimony-free.
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Diodes DMT67M8LSS technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 14.8A |
| Continuous Drain Current at 70°C | 11.8A |
| Pulsed Drain Current | 120A |
| Power Dissipation | 2.2W |
| Drain-Source On-Resistance Max at VGS=10V | 6.6mΩ |
| Drain-Source On-Resistance Max at VGS=4.5V | 8.4mΩ |
| Gate Threshold Voltage | 1.3 to 3V |
| Input Capacitance | 2130pF |
| Total Gate Charge at VGS=4.5V | 20nC |
| Total Gate Charge at VGS=10V | 37.5nC |
| Avalanche Energy | 84.5mJ |
| Operating and Storage Temperature Range | -55 to +150°C |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen Free | Yes |
| Antimony Free | Yes |
| AEC Qualified | No |
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