This N-channel enhancement mode MOSFET is rated for 60 V drain-source voltage and up to 52.1 A continuous drain current at TC = 25°C. It features a maximum drain-source on-resistance of 8.3 mΩ at VGS = 10 V and 12.5 mΩ at VGS = 4.5 V, with low input capacitance and fast switching characteristics. The device is supplied in a V-DFN3333-8 Type B package and is intended for synchronous rectification, notebook battery power management, load switching, power-management functions, and DC-DC converters. Operating and storage temperature range is -55°C to +150°C. The device is totally lead-free, fully RoHS compliant, and specified as halogen- and antimony-free.
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Diodes DMT69M5LCG technical specifications.
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 52.1 @ TC=25°CA |
| Continuous Drain Current | 14.6 @ TA=25°CA |
| Drain-Source On-Resistance | 8.3 max @ VGS=10VmΩ |
| Drain-Source On-Resistance | 12.5 max @ VGS=4.5VmΩ |
| Gate Threshold Voltage | 1.4 to 2.5V |
| Input Capacitance | 1406pF |
| Output Capacitance | 540pF |
| Reverse Transfer Capacitance | 52pF |
| Total Gate Charge | 28.4 @ VGS=10VnC |
| Total Gate Charge | 15.4 @ VGS=4.5VnC |
| Body Diode Forward Voltage | 1.2 maxV |
| Thermal Resistance Junction-to-Case | 3.7°C/W |
| Operating and Storage Temperature Range | -55 to +150°C |
| Turn-On Delay Time | 10.5ns |
| Turn-Off Fall Time | 79.5ns |
| Reverse Recovery Time | 26.7ns |
| Reverse Recovery Charge | 44.8nC |
| RoHS | Compliant |
| Lead Free | Yes |
| Halogen Free | Yes |
| Antimony Free | Yes |
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