This 60 V N-channel enhancement-mode MOSFET is intended for high-efficiency power-management applications such as synchronous rectifiers and DC-DC converters. It provides a maximum drain-source on-resistance of 6.2 mΩ at 10 V gate drive and supports up to 100 A continuous drain current at a case temperature of 25°C. The device is rated for operation from -55°C to +175°C, with 107 W total power dissipation and 1.4°C/W junction-to-case thermal resistance. It is supplied in the PowerDI5060-8 package with matte tin terminals and a green molded compound.
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Diodes DMTH6006SPS technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Continuous Drain Current (TA=25°C) | 17.8A |
| Drain-Source On-Resistance | 6.2 maxmΩ |
| Gate Threshold Voltage | 2 to 4V |
| Total Power Dissipation | 107W |
| Thermal Resistance Junction-to-Case | 1.4°C/W |
| Operating Junction Temperature | -55 to +175°C |
| Input Capacitance | 1721pF |
| Total Gate Charge | 27.9nC |
| Reverse-Recovery Time | 37.0ns |
| Reverse-Recovery Charge | 42.9nC |
| Avalanche Energy | 87.9mJ |
| Package Weight | 0.097g |
| RoHS | RoHS 3 compliant |
| Lead-free | Lead-free finish |
| Green | Halogen- and Antimony-free Green device |
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