N-channel enhancement-mode MOSFET provides an 80 V drain-source rating and 100 A continuous drain current at 25 °C case temperature. The device has low maximum on-resistance of 3.8 mΩ at 10 V gate drive and 5.3 mΩ at 4.5 V gate drive. It is housed in a PowerDI5060-8 molded plastic package with matte tin terminals and moisture sensitivity level 1. The MOSFET operates over a -55 °C to +175 °C junction and storage temperature range and is intended for DC-DC converter and load-switch applications. Lead-free, RoHS-compliant, halogen-free and antimony-free green construction is specified.
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Diodes DMTH8004LPS technical specifications.
| FET Type | N-channel enhancement mode |
| Drain-Source Voltage | 80V |
| Gate-Source Voltage | ±20V |
| Continuous Drain Current | 100A |
| Pulsed Drain Current | 400A |
| Continuous Body Diode Forward Current | 83A |
| Avalanche Current | 35A |
| Avalanche Energy | 183.7mJ |
| Power Dissipation at Case | 125W |
| Operating and Storage Temperature Range | -55 to +175°C |
| Drain-Source On-Resistance at 10 V | 3.8 maxmΩ |
| Drain-Source On-Resistance at 4.5 V | 5.3 maxmΩ |
| Gate Threshold Voltage | 1.3 to 2.8V |
| Zero Gate Voltage Drain Current | 1 maxµA |
| Input Capacitance | 4979 typpF |
| Output Capacitance | 1166 typpF |
| Reverse Transfer Capacitance | 71 typpF |
| Total Gate Charge at 10 V | 81 typnC |
| Turn-On Delay Time | 8.5 typns |
| Thermal Resistance Junction-to-Case | 1.2°C/W |
| RoHS | Compliant |
| Lead-free | Yes |
| Halogen And Antimony Free | Green device |
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