N-channel power MOSFET in a PowerQFN 5x6 surface-mount package supports 100 V drain-source voltage and 45 A drain current at 25 °C. The device has 6.5 mΩ on-resistance at 10 V gate drive and 20 A, with 9.0 mΩ specified at 4.5 V and 15 A. It is rated for 175 °C maximum junction temperature, 50 W power dissipation, and 400 A pulsed drain current. The single avalanche-rated configuration is AEC-Q101 qualified with MSL 3 moisture sensitivity. RoHS compliance uses exemption 7(a)-I, with REACH declarable, non-lead-free, and non-halogen-free material status.
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| Product family | MOSFETs (Field Effect Transistors) |
| Mounting type | SMD |
| Package | PowerQFN 5x6 |
| Qualification | AEC-Q101 |
| Configuration | Single |
| Polarity | N |
| Drain-source voltage | 100V |
| Drain current at 25°C | 45A |
| Drain current at 100°C | 42A |
| On-resistance at 10 V, 20 A | 0.0065Ω |
| On-resistance at 4.5 V, 15 A | 0.0090Ω |
| Maximum junction temperature | 175°C |
| Power dissipation | 50W |
| Peak drain current | 400A |
| Gate threshold voltage minimum | 1.2V |
| Gate threshold voltage maximum | 2.5V |
| Turn-on delay time | 19ns |
| Rise time | 20ns |
| Total gate charge at 10 V | 56.0nC |
| Moisture sensitivity level | 3 |
| RoHS | compliant with exemption 7(a)-I |
| REACH | declarable |
| Lead Free | No |
| Halogen Free | No |
| Qualification | AEC-Q101 |
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