This industrial-grade N-channel power MOSFET is rated for 60 V drain-source voltage and 50 A drain current at 25 °C in a TO-252AA/D-PAK package. It offers low on-resistance of 8.5 mΩ at VGS = 10 V and 16 mΩ at VGS = 4.5 V, with 42 W power dissipation and 150 °C maximum junction temperature. The device is avalanche rated, supports 160 A pulsed drain current, and has a 14 nC total gate charge at 10 V. Typical switching parameters include 10 ns turn-on delay, 16 ns rise time, 9 ns turn-off delay, and 2 ns fall time.
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Diotec DI050N06D1 technical specifications.
| Channel Type | N |
| Drain-Source Voltage | 60V |
| Drain Current (25°C) | 50A |
| Drain Current (100°C) | 30A |
| On-Resistance @ ID=8A, VGS=4.5V | 0.0160Ω |
| On-Resistance @ ID=10A, VGS=10V | 0.0085Ω |
| Maximum Junction Temperature | 150°C |
| Power Dissipation | 42W |
| Peak Drain Current | 160A |
| Gate Threshold Voltage Min | 1.2V |
| Gate Threshold Voltage Max | 2.5V |
| Turn-On Delay Time | 10ns |
| Rise Time | 16ns |
| Turn-Off Delay Time | 9ns |
| Fall Time | 2ns |
| Total Gate Charge (10V) | 14.0nC |
| Gate-Drain Charge | 3nC |
| Single Pulse Avalanche Energy | 36.0mJ |
| Input Capacitance | 825pF |
| Output Capacitance | 290pF |
| Reverse Transfer Capacitance | 15pF |
| Reverse Recovery Charge | 7nC |
| Rohs / Reach | Yes |
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