This N-channel power MOSFET is supplied in a TO-252AA/D-PAK SMD package and is rated for 60 V drain-source voltage. It supports 50 A drain current at 25°C and 30 A at 100°C, with on-resistance specified as 16 mΩ at 4.5 V gate drive and 8.5 mΩ at 10 V gate drive. The device is avalanche rated, handles 160 A peak drain current, and supports junction temperatures up to 150°C with 42 W power dissipation. It is listed as active, AEC-Q compliant, and RoHS/REACH compliant.
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Diotec DI050N06D1-Q technical specifications.
| Polarity | N |
| Mount Type | SMD |
| Package | TO-252AA/D-PAK |
| Drain Source Voltage | 60V |
| Drain Current @ 25°C | 50A |
| Drain Current @ 100°C | 30A |
| On-Resistance @ VGS=4.5V, ID=8A | 0.0160Ω |
| On-Resistance @ VGS=10V, ID=10A | 0.0085Ω |
| Junction Temperature Max | 150°C |
| Power Dissipation | 42W |
| Avalanche Rated | Yes |
| Peak Drain Current | 160A |
| Gate Threshold Voltage Min | 1.2V |
| Gate Threshold Voltage Max | 2.5V |
| Turn-On Delay Time | 10ns |
| Rise Time | 16ns |
| Turn-Off Delay Time | 9ns |
| Fall Time | 2ns |
| Total Gate Charge @ 10V | 14.0nC |
| Gate-Drain Charge | 3nC |
| Single Pulse Avalanche Energy | 36.0mJ |
| Input Capacitance | 825pF |
| Output Capacitance | 290pF |
| Reverse Transfer Capacitance | 15pF |
| Reverse Recovery Charge | 7nC |
| Rohs / Reach | Yes |
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