N-channel Gallium Nitride (GaN) power field-effect transistor featuring a low on-resistance of 0.007 ohms and a drain-source voltage rating of 100V. This single-element device supports a continuous drain current of 36A. Designed with 11 terminals, it is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2001C technical specifications.
General
Number of Terminals
11
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2001C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2001C to view detailed technical specifications.
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