N-channel Gallium Nitride (GaN) power field-effect transistor featuring a low on-resistance of 0.007 ohms and a drain-source voltage rating of 100V. This single-element device supports a continuous drain current of 36A. Designed with 11 terminals, it is HALOGEN FREE and ROHS COMPLIANT.
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| Number of Terminals | 11 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
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