N-channel Gallium Nitride (GaN) power field-effect transistor featuring a low on-resistance of 0.007 ohms and a drain-source voltage rating of 100V. This single-element device supports a continuous drain current of 36A. Designed with 11 terminals, it is HALOGEN FREE and ROHS COMPLIANT.
Quick Jump:
Technical Specifications
Efficient Power Conversion EPC2001C technical specifications.
General
| Number of Terminals | 11 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2001C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2001C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.