EPC is a pioneering semiconductor company dedicated to advancing power electronics through gallium nitride (GaN) technology specifically enhancement-mode GaN (eGaN®) FETs and integrated circuits.
GaN FET, N-Ch, 80V, 60A, 0.0025Ω, DIE
N-Channel MOSFET DIE, 100V, 16A, 0.007ohm
GaN FET - High Speed, Low Rds(on)
GaN FET, 100V, 36A, 0.007ohm, N-Channel, 1-Element
GaN MOSFET, N-Ch, 60V, 60A, 2.2mΩ, 1-Element, DIE
GaN MOSFET, 200V, 5A, 0.1ohm, N-Channel, 4-Pin
GaN MOSFET 80V 1-Element Bumped Die
GaN MOSFET, 40V, 10A, 0.016 Ohm, N-Channel, 1-Element
GaN MOSFET, 100V, 1A, 0.065Ω, N-Channel, 4-Pin DIE
GaN JFET - High-Performance FET Transistor
GaN MOSFET, 100V, 18A, 0.016Ω, N-Ch, 6-Pin
GaN MOSFET, 100V, 2.7A, 0.16ohm, N-Channel, 6-Term
N-Channel MOSFET, 200V, 22A, 0.025Ω, 1-Element, 7-Pin
GaN FET, N-Ch, 100V, 6A, 0.03ohm, 5-Pin
GaN MOSFET 150V 7mΩ Bumped Die
GaN MOSFET, 65V, 0.53ohm, N-Ch, 1-Elem, 6-Term
GaN MOSFET, 200V, 8.5A, 0.05ohm, N-Channel, DIE
GaN MOSFET, 40V, 60A, 1.5mΩ, N-Channel, DIE
GaN MOSFET, 200V, 48A, 0.008ohm, N-Channel, DIE
GaN FET, N-Ch, 100V, 48A, 3.8mΩ, 1-Element, DIE
Power Field-Effect Transistor, 10A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5
Power Field-Effect Transistor, 60A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-30
Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11
Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5