Efficient Power Conversion
EPC is a pioneering semiconductor company dedicated to advancing power electronics through gallium nitride (GaN) technology specifically enhancement-mode GaN (eGaN®) FETs and integrated circuits.
Top Parts
EPC2206
80 V, 2.2 mΩ, 90 A Automotive eGaN® FET
EPC9154
LiDAR Pulse Demonstration Board, 10 A, 30 V pulsed laser diode driver
EPC2022
100 V, 90 A eGaN® FET Enhancement Mode Power Transistor
EPC2204
100 V, 6 mΩ, 29 A Enhancement Mode GaN Power Transistor
EPC9156
30 V, 10 A High Current Pulsed Laser Diode Driver Development Board
EPC2215
200 V, 32 A Enhancement-Mode GaN Power Transistor
EPC2302
GaN FET N-Channel 100V 101A 1.8mOhm 7-PowerWQFN
EPC2207
200 V, 22 mΩ, 14 A, Enhancement-Mode GaN Power Transistor
EPC2023
30 V, 1.45 mΩ, 90 A eGaN® Enhancement Mode Power Transistor
EPC2059
170 V, 6.8 mΩ, 24 A Enhancement Mode Power Transistor (eGaN® FET)
EPC2037
GaN FET, Enhancement Mode, 100 V, 1.7 A, 550 mΩ
EPC2202
Automotive 80 V eGaN® FET, 17 mΩ, 18 A
EPC2007C
GaN FET, N-Ch, 100V, 6A, 0.03ohm, 5-Pin
EPC2015
Power Field-Effect Transistor, 33A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, DIE-11
EPC2012
Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
EPC2007
Power Field-Effect Transistor, 6A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5
EPC2001C
GaN FET, 100V, 36A, 0.007ohm, N-Channel, 1-Element
EPC2023ENGR
Power Field-Effect Transistor, 60A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, 6.05 X 2.30 MM, HALOGEN FREE AND ROHS COMPLIANT, DIE-30
EPC2014
Power Field-Effect Transistor, 10A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-5
EPC2033
GaN MOSFET 150V 7mΩ Bumped Die