N-channel silicon MOSFET featuring 200V drain-source voltage and 22A continuous drain current. Offers a low on-resistance of 0.025 ohms, enabling efficient power switching. Designed with a 1-element configuration and 7 terminals, operating across a temperature range of -40°C to 150°C. This metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2010C technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 7 |
| Min Operating Temperature | -40 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2010C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2010C to view detailed technical specifications.
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