N-channel silicon MOSFET featuring 200V drain-source voltage and 22A continuous drain current. Offers a low on-resistance of 0.025 ohms, enabling efficient power switching. Designed with a 1-element configuration and 7 terminals, operating across a temperature range of -40°C to 150°C. This metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2010C technical specifications.
General
Max Operating Temperature
150
Number of Terminals
7
Min Operating Temperature
-40
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2010C Datasheet
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