Efficient Power Conversion
EPC2012
Power Field-Effect Transistor, 3A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Gallium Nitride, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, DIE-4
Quick Jump:
Technical Specifications
Efficient Power Conversion EPC2012 technical specifications.
General
Max Operating Temperature
125
Number of Terminals
4
Min Operating Temperature
-40
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2012 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2012 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.