N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a continuous drain current (I(D)) of 5A and a drain-source voltage (V(DS)) of 200V, with a low on-resistance of 0.1 ohm. This single-element device utilizes a 4-terminal die package. It is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2012C technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2012C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2012C to view detailed technical specifications.
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