N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a continuous drain current (I(D)) of 5A and a drain-source voltage (V(DS)) of 200V, with a low on-resistance of 0.1 ohm. This single-element device utilizes a 4-terminal die package. It is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2012C technical specifications.
General
Number of Terminals
4
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2012C Datasheet
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