N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a continuous drain current (I(D)) of 10A and a drain-source voltage (V(DS)) of 40V, with a low on-resistance (R(DS(on))) of 0.016 ohms. This single-element device utilizes a 5-terminal configuration and is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2014C technical specifications.
General
Number of Terminals
5
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2014C Datasheet
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