N-channel Gallium Nitride (GaN) power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.016 ohms. This single-element transistor offers a continuous drain current of 18A. Designed with 6 terminals, it is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2016C technical specifications.
General
Number of Terminals
6
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2016C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2016C to view detailed technical specifications.
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