N-channel Gallium Nitride (GaN) power MOSFET featuring 100V drain-source voltage and a low on-resistance of 0.016 ohms. This single-element transistor offers a continuous drain current of 18A. Designed with 6 terminals, it is HALOGEN FREE and ROHS COMPLIANT.
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Technical Specifications
Efficient Power Conversion EPC2016C technical specifications.
General
| Number of Terminals | 6 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2016C Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2016C to view detailed technical specifications.
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