N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a low on-resistance of 0.05 ohms and a drain-source voltage rating of 200V. This single-element device supports a continuous drain current of 8.5A. The component is provided as a DIE-7 package, offering a 7-terminal configuration.
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Technical Specifications
Efficient Power Conversion EPC2019 technical specifications.
General
| Number of Terminals | 7 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2019 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2019 to view detailed technical specifications.
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