N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a low on-resistance of 0.05 ohms and a drain-source voltage rating of 200V. This single-element device supports a continuous drain current of 8.5A. The component is provided as a DIE-7 package, offering a 7-terminal configuration.
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Technical Specifications
Efficient Power Conversion EPC2019 technical specifications.
General
Number of Terminals
7
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Eccn Code
EAR99
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2019 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2019 to view detailed technical specifications.
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