N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a low on-resistance of 0.0022 ohms and a drain-source voltage rating of 60V. Supports a continuous drain current of 60A. This single-element device is presented as a DIE-30 package with 30 terminals.
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Technical Specifications
Efficient Power Conversion EPC2020 technical specifications.
General
| Number of Terminals | 30 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2020 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2020 to view detailed technical specifications.
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