N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a low on-resistance of 0.0022 ohms and a drain-source voltage rating of 60V. Supports a continuous drain current of 60A. This single-element device is presented as a DIE-30 package with 30 terminals.
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Technical Specifications
Efficient Power Conversion EPC2020 technical specifications.
General
Number of Terminals
30
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2020 Datasheet
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