N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with a continuous drain current (I(D)) of 60A and a drain-source voltage (V(DS)) of 40V. Features an exceptionally low on-resistance of 0.0015 ohms. This single-element power transistor is presented as a die with 30 terminals.
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Technical Specifications
Efficient Power Conversion EPC2024 technical specifications.
General
| Number of Terminals | 30 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2024 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2024 to view detailed technical specifications.
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