Gallium Nitride (GaN) MOSFET die featuring 150V breakdown voltage and 7mΩ on-resistance. Designed for high-efficiency power conversion, this discrete semiconductor offers a single element configuration with 24 terminals. Operating across a wide temperature range from -40°C to 150°C, it provides robust performance for demanding applications.
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Technical Specifications
Efficient Power Conversion EPC2033 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 24 |
| Min Operating Temperature | -40 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2033 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2033 to view detailed technical specifications.
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