Gallium Nitride (GaN) MOSFET die featuring 150V breakdown voltage and 7mΩ on-resistance. Designed for high-efficiency power conversion, this discrete semiconductor offers a single element configuration with 24 terminals. Operating across a wide temperature range from -40°C to 150°C, it provides robust performance for demanding applications.
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Technical Specifications
Efficient Power Conversion EPC2033 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
24
Min Operating Temperature
-40
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
Lead Free
Yes
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC2033 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2033 to view detailed technical specifications.
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