N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) with a 1A continuous drain current (I(D)) and a 100V drain-source voltage. Features a low on-resistance of 0.065 ohms. This single-element device utilizes a DIE-4 package with 4 terminals.
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Technical Specifications
Efficient Power Conversion EPC2036 technical specifications.
General
| Number of Terminals | 4 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2036 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2036 to view detailed technical specifications.
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