Gallium Nitride (GaN) MOSFET transistor featuring an 80V breakdown voltage and a bumped die construction. Designed for high-efficiency power conversion applications, this single-element device operates across a wide temperature range from -40°C to 150°C. It offers 9 terminals for flexible integration into various electronic circuits.
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Technical Specifications
Efficient Power Conversion EPC2039 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 9 |
| Min Operating Temperature | -40 |
| Terminal Position | UNSPECIFIED |
| Number of Elements | 1 |
Compliance
| Lead Free | Yes |
| REACH | unknown |
| Military Spec | False |
Datasheet
Efficient Power Conversion EPC2039 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2039 to view detailed technical specifications.
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