Gallium Nitride (GaN) MOSFET transistor featuring an 80V breakdown voltage and a bumped die construction. Designed for high-efficiency power conversion applications, this single-element device operates across a wide temperature range from -40°C to 150°C. It offers 9 terminals for flexible integration into various electronic circuits.
Quick Jump:
Technical Specifications
Efficient Power Conversion EPC2039 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
9
Min Operating Temperature
-40
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
Lead Free
Yes
REACH
unknown
Military Spec
False
Datasheet
Efficient Power Conversion EPC2039 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC2039 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.