N-Channel Silicon Metal-oxide Semiconductor FET, a power field-effect transistor designed for high-performance applications. Features a low on-resistance of 0.007 ohms and a maximum drain current of 16A. Operates efficiently within a temperature range of -40°C to 150°C. This single-element device offers a 100V breakdown voltage.
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Technical Specifications
Efficient Power Conversion EPC2045 technical specifications.
General
Max Operating Temperature
150
Number of Terminals
15
Min Operating Temperature
-40
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
REACH
unknown
Military Spec
False
Datasheet
Efficient Power Conversion EPC2045 Datasheet
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