N-Channel Gallium Nitride (GaN) Power Field-Effect Transistor designed for high-performance applications. Features a low on-resistance of 0.53 ohms and a drain-source voltage rating of 65V. This single-element device utilizes Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) technology. The component is HALOGEN FREE and ROHS COMPLIANT, supplied in a DIE-6 package with 6 terminals.
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Technical Specifications
Efficient Power Conversion EPC8002 technical specifications.
General
Number of Terminals
6
Terminal Position
UNSPECIFIED
Number of Elements
1
Compliance
RoHS
Yes
REACH
Compliant
Military Spec
False
Datasheet
Efficient Power Conversion EPC8002 Datasheet
Download the complete datasheet for Efficient Power Conversion EPC8002 to view detailed technical specifications.
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