N-Channel Gallium Nitride Power Field-Effect Transistor featuring a 100V breakdown voltage and a low on-resistance of 0.16 ohms. This single-element device offers a continuous drain current capability of 2.7A. Designed with a 6-terminal package, it is HALOGEN FREE and ROHS COMPLIANT, suitable for demanding power applications.
Efficient Power Conversion EPC8010 technical specifications.
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