NPN Silicon phototransistor; T1; fast response; narrow field of view
Eg&G VTT3323LAH technical specifications.
| Collector Emitter Breakdown Voltage | 30V |
| Current Rating | 25mA |
| Polarity | NPN |
| Power Consumption | 50mW |
| Power Dissipation | 50mW |
| Viewing Angle | 10° |
| RoHS | Compliant |
No datasheet is available for this part.
