
NPN Silicon Bipolar Junction Transistor (BJT) in a TO-92 package, designed for through-hole mounting. Features a maximum collector-emitter voltage (VCEO) of 30V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 110 and a transition frequency of 300MHz. Power dissipation is rated at 500mW, with an operating temperature range from -65°C to 150°C. Supplied in an ammo pack with 2000 units.
Onsemi BC548BTA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 600mV |
| Contact Plating | Tin, Matte |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 4.58mm |
| hFE Min | 110 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 100mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 500mW |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | NPN |
| Power Dissipation | 500mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| Weight | 0.24g |
| Width | 3.86mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC548BTA to view detailed technical specifications.
No datasheet is available for this part.
