
PNP Bipolar Junction Transistor (BJT) with a 1A collector current rating and 80V collector-emitter voltage. Features a 100MHz transition frequency, 40 minimum hFE, and a TO-92 package for through-hole mounting. Operates across a wide temperature range from -65°C to 150°C, with a maximum power dissipation of 1W. This RoHS compliant component is supplied in an ammo pack with 2000 units.
Onsemi BC640TA technical specifications.
| Package/Case | TO-92 |
| Collector Base Voltage (VCBO) | -100V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 500mV |
| Contact Plating | Tin, Matte |
| Current | 1A |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 4.58mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 4.58mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 1A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Ammo Pack |
| Polarity | PNP |
| Power Dissipation | 1W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Voltage | 80V |
| DC Rated Voltage | -80V |
| Weight | 0.008466oz |
| Width | 3.86mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi BC640TA to view detailed technical specifications.
No datasheet is available for this part.
