The TLP521-2(GR,F,T) is a dual PNP transistor packaged in a PDIP with a collector emitter saturation voltage of 400mV and a collector emitter voltage of 55V. It has a current transfer ratio of 600% and a forward current of 50mA. The device is rated for operation between -25°C and 85°C and has a power dissipation of 150mW. It is available on tape and reel for through hole mounting.
PackagePDIP
MountingThrough Hole
Power150mW
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Technical Specifications
Toshiba TLP521-2(GR,F,T) technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 55V |
| Current Transfer Ratio | 600% |
| Forward Current | 50mA |
| Max Operating Temperature | 85°C |
| Min Operating Temperature | -25°C |
| Mount | Through Hole |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 150mW |
| Reverse Breakdown Voltage | 5V |
Compliance
| RoHS | Compliant |
Datasheet
Toshiba TLP521-2(GR,F,T) Datasheet
Download the complete datasheet for Toshiba TLP521-2(GR,F,T) to view detailed technical specifications.
No datasheet is available for this part.