Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
FUJI ELECTRIC 6MBI35S-120-50 IGBT Single Transistor, 35 A, 2.65 V, 240 W, 1.2 kV, Module, 17 Pins
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, M624, 17 PIN
