Silicon Controlled Rectifier, 39.25A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-26
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
7MBR25LC120
