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Advanced Linear Devices

MOSFET 4N-CH 10.6V 16SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 3mA

Drain to Source Breakdown Voltage: 10V

Drain to Source Resistance: 500R

Advanced Linear Devices

4 N-Channel MOSFET, 10V, 3mA, 500mW, DIP, Through Hole

Volume Production

Package/Case: DIP

Continuous Drain Current (ID): 3mA

Drain to Source Breakdown Voltage: 10V

Drain to Source Resistance: 500R

Advanced Linear Devices

MOSFET 4N-CH 10.6V 16SOIC

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 3mA

Drain to Source Breakdown Voltage: 10V

Drain to Source Resistance: 500R

Advanced Linear Devices

N-Channel FET, 4-Channel, 10V, 500mW, SOIC

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Package/Case: SOIC

Continuous Drain Current (ID): 3mA

Drain to Source Breakdown Voltage: 10V

Drain to Source Resistance: 500R