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Search Results for "AOWF11C60"

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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Active

Package/Case: TO-220-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 2.01nF

Transistor

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Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 1.99nF

aMOS 600V 11A 28W Through Hole MOSFET

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 545pF

Single N-Channel MOSFET 11A 30V Through Hole 50W Rail/Tube

Volume Production

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C