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AOTF11C60L

Volume Production

Continuous Drain Current (ID): 11A

Gate to Source Voltage (Vgs): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

,

Active

Package/Case: TO-220-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 2.01nF

Transistor

,

Active

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 1.99nF

Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-262F

Not Recommended for New Design

Package/Case: TO-262-3

Continuous Drain Current (ID): 11A

Drain to Source Voltage (Vdss): 600V

Input Capacitance: 545pF