Search Results for &quot; BFY66 &quot;

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BFY64CSM-JQR-B

BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED LCC1 CERAMIC SURFACE MOUNT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BFY64CSM-JQR

BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED LCC1 CERAMIC SURFACE MOUNT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BFY64CSM-JQR-A

3-Pin CLLCC-1 Non-Lead-Frame SMT BJT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BGY66B112

120 MHz Single-Chip Amplifier, SOT-115, 135mA Supply Current

Obsolete

Package/Case: SOT-115

Contact Plating: Gold

Lead Free: Lead Free

Mount: Screw

CFY66-10PES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08S

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PS

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08ES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

BFY640

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, MICRO-X1, 4 PIN

DISK BUTTON, O-CRDB-F4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-10PP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

BFY640-04

RF Small Signal Bipolar Transistor, 0.05A I(C), NPN,

Active

Max Operating Temperature: 175

BGY66B,112

Reverse Amplifier CATV Amplifier 120MHz Single-Element 7-Pin SFM Bulk

Obsolete

Number of Elements per Chip: 1

Maximum Operating Frequency: 120MHz

Maximum CTB @ Test Conditions: -66dB

Maximum Xmod @ Test Conditions: -54dB

CFY66-10P

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-10ES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-10PS

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08P

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PH

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

Search Results for "BFY66"

Filters

BFY64CSM-QR-B

3-Pin CLLCC-1 Non-Lead-Frame SMT BJT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BFY64CSM-JQR-B

BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED LCC1 CERAMIC SURFACE MOUNT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BFY64CSM-JQR

BIPOLAR PNP DEVICE IN A HERMETICALLY SEALED LCC1 CERAMIC SURFACE MOUNT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BFY64CSM-JQR-A

3-Pin CLLCC-1 Non-Lead-Frame SMT BJT

Non-Lead-Frame SMT

Active

Basic Package Type: Non-Lead-Frame SMT

Package Family Name: LLCC

Package/Case: CLLCC-1

Lead Shape: No Lead

BGY66B112

120 MHz Single-Chip Amplifier, SOT-115, 135mA Supply Current

Obsolete

Package/Case: SOT-115

Contact Plating: Gold

Lead Free: Lead Free

Mount: Screw

CFY66-10PES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08S

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PS

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08ES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

BFY640

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, C Band, Silicon Germanium, NPN, MICRO-X1, 4 PIN

DISK BUTTON, O-CRDB-F4

Active

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-10PP

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

BFY640-04

RF Small Signal Bipolar Transistor, 0.05A I(C), NPN,

Active

Max Operating Temperature: 175

BGY66B,112

Reverse Amplifier CATV Amplifier 120MHz Single-Element 7-Pin SFM Bulk

Obsolete

Number of Elements per Chip: 1

Maximum Operating Frequency: 120MHz

Maximum CTB @ Test Conditions: -66dB

Maximum Xmod @ Test Conditions: -54dB

CFY66-10P

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-10ES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PES

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-10PS

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08P

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4

DISK BUTTON, O-CRDB-F4

Transferred

Max Operating Temperature: 150

Number of Terminals: 4

Terminal Position: RADIAL

Pin Count: 4

CFY66-08PH

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, MICRO-X-4