Search Results for &quot; BLF8G09LS-270WJ &quot;

Trans RF MOSFET N-CH 65V 7-Pin CDFM T/R

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CDFP-F6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

BLF8G09LS-270GWJ

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

SMALL OUTLINE, R-CDSO-G6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CDFP-F6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

BLF8G09LS-270W/ACC-6L/TUBE-BUL

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

BLF8G09LS-270GWJ

BLF8G09LS-270GW/ACC-6L/REEL13

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

BLF8G09LS-270W

RF Power Field-Effect Transistor,

Contact Manufacturer

Search Results for "BLF8G09LS-270WJ"

Filters

Trans RF MOSFET N-CH 65V 7-Pin CDFM T/R

Not Recommended for New Design

Package/Case: SOT

Gate to Source Voltage (Vgs): 13V

Max Operating Temperature: 225°C

Min Operating Temperature: -65°C

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CDFP-F6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

BLF8G09LS-270GWJ

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

SMALL OUTLINE, R-CDSO-G6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, ROHS COMPLIANT, CERAMIC PACKAGE-6

FLATPACK, R-CDFP-F6

Contact Manufacturer

Number of Terminals: 6

Terminal Position: DUAL

Number of Elements: 1

BLF8G09LS-270W/ACC-6L/TUBE-BUL