Search Results for &quot; BST82 &quot;

175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

SMALL OUTLINE, R-PDSO-G3

Transferred

Package/Case: TO-236AB

Continuous Drain Current (ID): 190mA

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transferred

Max Operating Temperature: 150

Small Signal Field-Effect Transistor

SMALL OUTLINE, R-PDSO-G3

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -65

Terminal Position: DUAL

North American Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Max Operating Temperature: 150

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

SMALL OUTLINE, R-PDSO-G3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -65

Terminal Position: DUAL

BST82,235

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

SMALL OUTLINE, R-PDSO-G3

Active

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Number of Elements: 1

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

SMALL OUTLINE, R-PDSO-G3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

BST82,215-RP100*3867781

BST82,215-RP100*3867781

Volume Production

Continuous Drain Current (ID): 190mA

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -65°C

BST82215

BST82215

Volume Production

Package/Case: SOT-23-3

Continuous Drain Current (ID): 190mA

Drain to Source Voltage (Vdss): 100V

Lead Free: Lead Free

BST82/T3

MOSFET TRENCH-100 -TAPE 13

Obsolete

Continuous Drain Current (ID): 190mA

Drain to Source Breakdown Voltage: 100V

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

BST82TA

Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PDSO-G3

Transferred

Number of Terminals: 3

Terminal Position: DUAL

Number of Elements: 1

BST82TC

Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PDSO-G3

Transferred

Number of Terminals: 3

Terminal Position: DUAL

Number of Elements: 1

Search Results for "BST82"

Filters

175mA, 80V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

SMALL OUTLINE, R-PDSO-G3

Transferred

Package/Case: TO-236AB

Continuous Drain Current (ID): 190mA

Drain to Source Voltage (Vdss): 100V

Gate to Source Voltage (Vgs): 20V

Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Transferred

Max Operating Temperature: 150

Small Signal Field-Effect Transistor

SMALL OUTLINE, R-PDSO-G3

Not Recommended

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -65

Terminal Position: DUAL

North American Philips

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Transferred

Max Operating Temperature: 150

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

SMALL OUTLINE, R-PDSO-G3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Min Operating Temperature: -65

Terminal Position: DUAL

BST82,235

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

SMALL OUTLINE, R-PDSO-G3

Active

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

Number of Elements: 1

BST82 - N-channel TrenchMOS intermediate level FET TO-236 3-Pin

SMALL OUTLINE, R-PDSO-G3

Transferred

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: DUAL

Pin Count: 3

BST82,215-RP100*3867781

BST82,215-RP100*3867781

Volume Production

Continuous Drain Current (ID): 190mA

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -65°C

BST82215

BST82215

Volume Production

Package/Case: SOT-23-3

Continuous Drain Current (ID): 190mA

Drain to Source Voltage (Vdss): 100V

Lead Free: Lead Free

BST82/T3

MOSFET TRENCH-100 -TAPE 13

Obsolete

Continuous Drain Current (ID): 190mA

Drain to Source Breakdown Voltage: 100V

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

BST82TA

Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

SMALL OUTLINE, R-PDSO-G3

Transferred

Number of Terminals: 3

Terminal Position: DUAL

Number of Elements: 1

BST82TC

Small Signal Field-Effect Transistor, 0.175A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET