Rectifier Diode, 1 Phase, 2 Element, 10A, 600V V(RRM), Silicon, FULL PACK-3
Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Rectifier Diode, 1 Phase, 2 Element, 10A, 200V V(RRM), Silicon,
Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, FULL PACK-3
Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon,
4.6A, 600V, 0.95ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, IPAK-3
FIBER OPTIC TRANSCEIVER, 3125Mbps(Tx), 3125Mbps(Rx), PANEL MOUNT
600V 7A N-CH MOSFET, TO-251-3
Power Field-Effect Transistor, 4.6A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, IPAK-3
600V N-Channel Power MOSFET, 4.6A, 950mΩ, TO-251
Inductor Power Shielded Wirewound 0.12uH 20% 100KHz Metal 32A 0.00077Ohm DCR 2926 T/R
Inductor Power Shielded Wirewound 0.56uH 20% 100KHz Metal 30A 0.00085Ohm DCR T/R
Inductor Power Shielded Wirewound 0.18uH 20% 100KHz Metal 38A 0.00054Ohm DCR T/R
Inductor Power Shielded Wirewound 0.47uH 20% 100KHz Metal 18A 0.00248Ohm DCR 2926 T/R
64-Kbit serial I<sup>2</sup>C bus EEPROM 4 balls CSP
Inductor Power Shielded Wirewound 0.68uH 20% 100KHz Metal 15A 0.0038306Ohm DCR 2926 T/R
64-Kbit serial I<sup>2</sup>C bus EEPROM
128Kb I2C EEPROM, Serial Memory IC, CSP