Search Results for &quot; FDC5612_F095 &quot;

N-Channel MOSFET, 60V, 4.3A, 55mR, SOT-23-6

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 4.3A

Drain to Source Breakdown Voltage: 60V

Drain to Source Resistance: 55mR

MOSFET N-CH 200V 1.1A 6-SSOT

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 1.1A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 725mR

FDC3612_F095

MOSFET N-CH 100V 2.6A 6-SSOT

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.6A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 125mR

Fairchild

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Obsolete

Max Operating Temperature: 150

Search Results for "FDC5612_F095"

Filters

FDC5612_F095

N-Channel MOSFET, 60V, 4.3A, 55mR, SOT-23-6

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 4.3A

Drain to Source Breakdown Voltage: 60V

Drain to Source Resistance: 55mR

MOSFET N-CH 200V 1.1A 6-SSOT

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 1.1A

Drain to Source Breakdown Voltage: 200V

Drain to Source Resistance: 725mR

FDC3612_F095

MOSFET N-CH 100V 2.6A 6-SSOT

Obsolete

Package/Case: SOT-23-6

Continuous Drain Current (ID): 2.6A

Drain to Source Breakdown Voltage: 100V

Drain to Source Resistance: 125mR

Fairchild

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET