Search Results for &quot; FDC634P &quot;

P-Channel MOSFET, -20V, -3.5A, 80mR, SOT-23-6

LEAD FREE, SUPERSOT-6

Active

Package/Case: SOT-23-6

Continuous Drain Current (ID): 3.5A

Current Rating: -3.5A

Drain to Source Breakdown Voltage: -20V

Fairchild

Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6

SMALL OUTLINE, R-PDSO-G6

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Pin Count: 6

Rochester Electronics

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

Volume Production

Continuous Drain Current (ID): 3.5A

Current Rating: -3.5A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 80mR

FDC634P-NL

20V P-ch. Fet, 80 Mo, SSOT6 <az

Volume Production

FDC634P_NF073

Volume Production

RoHS Compliant: Yes

Search Results for "FDC634P"

Filters

P-Channel MOSFET, -20V, -3.5A, 80mR, SOT-23-6

LEAD FREE, SUPERSOT-6

Active

Package/Case: SOT-23-6

Continuous Drain Current (ID): 3.5A

Current Rating: -3.5A

Drain to Source Breakdown Voltage: -20V

Fairchild

Small Signal Field-Effect Transistor, 3.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6

SMALL OUTLINE, R-PDSO-G6

Transferred

Max Operating Temperature: 150

Number of Terminals: 6

Terminal Position: DUAL

Pin Count: 6

Rochester Electronics

P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -3.5A, 80mΩ

Volume Production

Continuous Drain Current (ID): 3.5A

Current Rating: -3.5A

Drain to Source Breakdown Voltage: -20V

Drain to Source Resistance: 80mR

FDC634P-NL