Search Results for &quot; FDN359BN_F095 &quot;

N-CH MOSFET 30V 2.7A 46mR SSOT3

Volume Production

Package/Case: TO-236-3

Continuous Drain Current (ID): 2.7A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 26mR

Fairchild

2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Contact Manufacturer

Number of Terminals: 3

Terminal Position: DUAL

Number of Elements: 1

FDN359BN"F095

FAIRCHILD SEMICONDUCTOR FDN359BN"F095 MOSFET, N CHANNEL, 30V, 0.026OHM, 2.7A, SUPERSOT-3

Volume Production

Continuous Drain Current (ID): 2.7A

Drain to Source Voltage (Vdss): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Search Results for "FDN359BN_F095"

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N-CH MOSFET 30V 2.7A 46mR SSOT3

Volume Production

Package/Case: TO-236-3

Continuous Drain Current (ID): 2.7A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 26mR

Fairchild

2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SUPERSOT-3

SMALL OUTLINE, R-PDSO-G3

Contact Manufacturer

Number of Terminals: 3

Terminal Position: DUAL

Number of Elements: 1

FDN359BN"F095

FAIRCHILD SEMICONDUCTOR FDN359BN"F095 MOSFET, N CHANNEL, 30V, 0.026OHM, 2.7A, SUPERSOT-3