
N-channel MOSFET, surface mount, TO-236-3 package. Features 30V drain-source breakdown voltage and 2.7A continuous drain current. Offers low on-resistance with a maximum of 60mΩ at a nominal gate-source voltage of 1.8V. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 460mW. Includes fast switching characteristics with a turn-on delay of 7ns and fall time of 2ns.
Onsemi FDN359BN_F095 technical specifications.
| Package/Case | TO-236-3 |
| Continuous Drain Current (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 26mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 60mR |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 650pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460mW |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 500mW |
| Rds On Max | 46mR |
| Reach SVHC Compliant | No |
| Series | PowerTrench® |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 7ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FDN359BN_F095 to view detailed technical specifications.
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