Search Results for &quot; FF200R12KE3 &quot;

IGBT 1.2kV 295A 125°C FLANGE MOUNT

FLANGE MOUNT, R-XUFM-X7

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Height: 29mm

Eupec

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

MODULE-7

Transferred

Max Operating Temperature: 125

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

FF200R12KE3HOSA1

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Pin Count: 7

FF200R12KE3_B2

IGBT Modules N-CH 1.2KV 295A

Obsolete

Package Quantity: 10

Search Results for "FF200R12KE3"

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IGBT 1.2kV 295A 125°C FLANGE MOUNT

FLANGE MOUNT, R-XUFM-X7

Active

Package/Case: Module

Collector Emitter Breakdown Voltage: 1.2kV

Collector Emitter Voltage (VCEO): 1.2kV

Height: 29mm

Eupec

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

MODULE-7

Transferred

Max Operating Temperature: 125

Number of Terminals: 7

Terminal Position: UPPER

Number of Elements: 2

FF200R12KE3HOSA1

Insulated Gate Bipolar Transistor, 295A I(C), 1200V V(BR)CES, N-Channel, MODULE-7

FLANGE MOUNT, R-XUFM-X7

Active

Max Operating Temperature: 150

Number of Terminals: 7

Terminal Position: UPPER

Pin Count: 7

FF200R12KE3_B2

IGBT Modules N-CH 1.2KV 295A