The FF200R12KE3 is a 1.2kV insulated gate bipolar transistor (IGBT) with a maximum collector current of 295A. It is designed for operation in a temperature range of -40°C to 125°C. The device is packaged in a flange mount configuration, suitable for panel mounting via screws. The FF200R12KE3 is compliant with RoHS regulations.
PackageModule
MountingPanel, Screw
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Technical Specifications
Infineon FF200R12KE3 technical specifications.
General
| Package/Case | Module |
| Collector Emitter Breakdown Voltage | 1.2kV |
| Collector Emitter Voltage (VCEO) | 1.2kV |
| Height | 29mm |
| Length | 106.4mm |
| Max Collector Current | 295A |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 1.05kW |
| Mount | Panel, Screw |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Width | 61.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon FF200R12KE3 Datasheet
Download the complete datasheet for Infineon FF200R12KE3 to view detailed technical specifications.
No datasheet is available for this part.