RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, SMT, 4 PIN
GaAs HEMTs, CS Front-end, TVRO, Handyphone BTS, 0.3dB, 4GHz
Surface Mount GaAs P-Channel JFET, Case LG, 4-Pin, 1.78x1.78mm
