Search Results for &quot; FQI9N50TU &quot;

N-CHANNEL MOSFET 500V 9A TO-262-3 Through Hole

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Current Rating: 9A

Drain to Source Breakdown Voltage: 500V

MOSFET 500V N-Channel Adv Q-FET C-Series

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Current Rating: 9A

Drain to Source Breakdown Voltage: 500V

FQI6N50TU

Trans MOSFET N-CH 500V 5.5A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 5.5A

Current Rating: 5.5A

Drain to Source Breakdown Voltage: 500V

FQI5N50TU

MOSFET

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 1.8R

Fall Time: 35ns

Fairchild

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, I2PAK-3

LEAD FREE, I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Rochester Electronics

9A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3

LEAD FREE, I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Number of Elements: 1

FQI9N30TU

FET N-Channel Single 9A 30V Through Hole

Volume Production

Continuous Drain Current (ID): 9A

Gate to Source Voltage (Vgs): 30V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Search Results for "FQI9N50TU"

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FQI9N50TU

N-CHANNEL MOSFET 500V 9A TO-262-3 Through Hole

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Current Rating: 9A

Drain to Source Breakdown Voltage: 500V

MOSFET 500V N-Channel Adv Q-FET C-Series

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 9A

Current Rating: 9A

Drain to Source Breakdown Voltage: 500V

FQI6N50TU

Trans MOSFET N-CH 500V 5.5A 3-Pin(3+Tab) I2PAK T/R

Obsolete

Package/Case: TO-262-3

Continuous Drain Current (ID): 5.5A

Current Rating: 5.5A

Drain to Source Breakdown Voltage: 500V

FQI5N50TU

MOSFET

Obsolete

Continuous Drain Current (ID): 4.5A

Drain to Source Breakdown Voltage: 500V

Drain to Source Resistance: 1.8R

Fall Time: 35ns

Fairchild

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, I2PAK-3

LEAD FREE, I2PAK-3

Obsolete

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Rochester Electronics

9A, 500V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, I2PAK-3

LEAD FREE, I2PAK-3

Active

Number of Terminals: 3

Terminal Position: SINGLE

Pin Count: 3

Number of Elements: 1

FQI9N30TU

FET N-Channel Single 9A 30V Through Hole