This FET N-channel device has a continuous drain current of 9A and a gate to source voltage of 30V. It operates within a temperature range of -55°C to 150°C. The device is packaged in a rail/tube format for through hole mounting. It is not RoHS compliant.
MountingThrough Hole
Power3.13W
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Technical Specifications
Onsemi FQI9N30TU technical specifications.
General
| Continuous Drain Current (ID) | 9A |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Number of Elements | 1 |
| Packaging | Rail/Tube |
| Power Dissipation | 3.13W |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
No datasheet is available for this part.