High-Power IGBT, 1.2kV, 105A, Through Hole, 150°C
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-274AA, LEAD FREE, SUPER-247, 3 PIN
Trans IGBT Chip N-CH 1.2KV 105A 3-Pin(3+Tab) TO-274AA
