
INTERNATIONAL RECTIFIER IRF2903ZSPBF MOSFET Transistor, N Channel, 260 A, 30 V, 0.0019 ohm, 10 V, 4 V
Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 3.5MILLIOHMS; Id 170A; TO-220AB; Pd 300W; -55DE


Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, MODIFIED TO-3, 2 PIN

Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN