Search Results for &quot; IRF5N5210 &quot;

31A 20V Surface Mount N-Channel MOSFET

CHIP CARRIER, R-CBCC-N3

Transferred

Package/Case: SMD/SMT

Continuous Drain Current (ID): 31A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Trans MOSFET P-CH 100V 31A 3-Pin SMD-1

Volume Production

Continuous Drain Current (ID): 31A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Trans MOSFET P-CH 100V 31A 3-Pin SMD-1

Volume Production

Continuous Drain Current (ID): 31A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET,

Active

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

HERMETIC SEALED, SMD-1, 3 PIN

Active

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Transistor,

Active

Max Operating Temperature: 150

Number of Elements: 1

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Search Results for "IRF5N5210"

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31A 20V Surface Mount N-Channel MOSFET

CHIP CARRIER, R-CBCC-N3

Transferred

Package/Case: SMD/SMT

Continuous Drain Current (ID): 31A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

CHIP CARRIER, R-CBCC-N3

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Trans MOSFET P-CH 100V 31A 3-Pin SMD-1

Volume Production

Continuous Drain Current (ID): 31A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Trans MOSFET P-CH 100V 31A 3-Pin SMD-1

Volume Production

Continuous Drain Current (ID): 31A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET,

Active

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Power Field-Effect Transistor, 31A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN

HERMETIC SEALED, SMD-1, 3 PIN

Active

Number of Terminals: 3

Terminal Position: BOTTOM

Number of Elements: 1

Transistor,

Active

Max Operating Temperature: 150

Number of Elements: 1

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line