Search Results for "IRF6607"

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Power Field-Effect Transistor, 27A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4.4mR

Drain to Source Voltage (Vdss): 30V

N-CHANNEL HEXFET MOSFET 30V 27A 3.6W Surface Mount

End of Life

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.3mR

Drain to Source Voltage (Vdss): 30V

Power Field-Effect Transistor, 27A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3

CHIP CARRIER, R-XBCC-N3

Obsolete

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 4.4mR

Drain to Source Voltage (Vdss): 30V

N-CHANNEL HEXFET MOSFET 30V 27A 3.6W Surface Mount

End of Life

Continuous Drain Current (ID): 27A

Drain to Source Breakdown Voltage: 30V

Drain to Source Resistance: 3.3mR

Drain to Source Voltage (Vdss): 30V