Search Results for "IRF9362PBF"

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Datasheet

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA

Search Results for "IRF9362PBF"

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IRF9362PBF

International Rectifier

Trans MOSFET P-CH 30V 8A 8-Pin SOIC N Tube

Datasheet

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 8A

Drain to Source Breakdown Voltage: -30V

Drain to Source Voltage (Vdss): -30V

IRF9332PBF

International Rectifier

P-CHANNEL MOSFET, -30V, 9.8A, 28.1mR, SOIC

Datasheet

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): -9.8A

Drain to Source Breakdown Voltage: -30V

Drain to Source Resistance: 28.1mR

IRF9392PBF

International Rectifier

Trans MOSFET P-CH 30V 9.8A 8-Pin SOIC Tube

Datasheet

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 9.8A

Fall Time: 58ns

Gate to Source Voltage (Vgs): 25V

IRF9392PBF

Infineon

Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Datasheet

HALOGEN FREE AND ROHS COMPLIANT, SOP-8

Obsolete

Max Operating Temperature: 150

Number of Terminals: 8

Terminal Position: DUAL

JEDEC Package Code: MS-012AA