Search Results for &quot; IRFH6200TR2PBF &quot;

N-CH MOSFET 20V 45A 1.2mR QFN

Obsolete

Package/Case: QFN

Continuous Drain Current (ID): 45A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.2mR

Infineon

Power Field-Effect Transistor, 45A I(D), 20V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Active

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 45A I(D), 20V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

SMALL OUTLINE, R-PDSO-N5

Transferred

Package/Case: TO-252-3

Continuous Drain Current (ID): 42A

Drain to Source Voltage (Vdss): 75V

Input Capacitance: 2.19nF

Search Results for "IRFH6200TR2PBF"

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IRFH6200TR2PBF

N-CH MOSFET 20V 45A 1.2mR QFN

Obsolete

Package/Case: QFN

Continuous Drain Current (ID): 45A

Drain to Source Breakdown Voltage: 20V

Drain to Source Resistance: 1.2mR

Infineon

Power Field-Effect Transistor, 45A I(D), 20V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Active

Max Operating Temperature: 150

Number of Terminals: 5

Terminal Position: DUAL

Number of Elements: 1

Power Field-Effect Transistor, 45A I(D), 20V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8